Structure containing self-aligned conductive lines and fabricating method thereof

A structure containing self-aligned conductive lines, comprising:

• a substrate;
• a plurality of isolation structures located in the substrate, and each of the isolation structures having a protrusion protrusive from the surface of the substrate, wherein a gap is formed between the two protrusions, an active region is defined between the adjacent isolation structures, and a plurality of devices are formed in the active region;
• and
• a conductive line located in the gap, covering over the active region to electrically connect the devices, wherein the surface of the conductive line is of the same height as the top surfaces of isolation structures.

A semiconductor structure, comprising:

• a substrate;
• a plurality of isolation structures, located in the substrate, and each of the isolation structures having a protrusion protrusive from the surface of the substrate, a gap is formed between the two protrusions, and an active region is defined between the adjacent isolation structures;
• a plurality of trench devices located in the active region and each of the trench devices comprising:
• a tunnel oxide layer disposed on the surface of a trench in the active region;
• a control gate;
• two floating gates disposed on both sides of the control gate;
• a dielectric layer located between the control gate and the floating gates and covering them;
• and
• a conductive line, located in the gap, covering over the active region to electrically connect the trench devices, wherein the surface of the conductive line is of the same height as the top surfaces of isolation structures.