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US 2006/0189073 A1Published application
Control gate profile for flash technology
AssigneeIntel Corporation
InventorsStefano Franciarini, Dorotea Arcidiacono
Life of this patent
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Abstract
A nonvolatile memory device has a floating gate and a control gate. The floating gate incorporates a substantially vertical profile and provides the charge storage mechanism to set a specific threshold voltage. The control gate incorporates a sloped profile to enhance reliability.
Claims18
A nonvolatile memory device, comprising:
- a substrate;
- a first insulating layer over the substrate;
- a first semiconductor layer formed over the first insulating layer to provide a floating gate for the nonvolatile memory device;
- a second insulating layer over the first semiconductor layer;
- and
- a second semiconductor layer formed over the second insulating layer to provide a control gate for the nonvolatile memory device, wherein the control gate is formed having a sloped profile with a width at a top of the control gate that is substantially less than a width at a bottom.
3 more elements
A method of fabricating a flash memory device, comprising:
- growing a first insulating layer over a substrate;
- forming a first polysilicon layer over the first insulating layer;
- providing a second insulating layer over the first polysilicon layer;
- and
- forming a second polysilicon layer over the second insulating layer, wherein the first polysilicon layer is a floating gate having top and bottom portions substantially parallel and sides substantially perpendicular to a surface of the substrate, and wherein the second polysilicon layer is a control gate having top and bottom portions substantially parallel to the surface of the substrate and sides not perpendicular to the surface of the substrate.
2 more elements
A method of storing information in a signal received by a wireless device, comprising:
- receiving, in the wireless device, the signal by a transceiver;
- processing the information in the signal by one of a first core or a second core;
- and
- storing the information in a flash memory formed with a floating gate and a control gate, where edges of the floating gate that are perpendicular to a surface of a substrate have a vertical profile while edges of the control gate have a sloped profile.
1 more element
A flash memory comprising:
- a substrate;
- a first insulating layer over the substrate;
- a first polysilicon layer over the first insulating layer;
- a second insulating layer over the first polysilicon layer;
- a second polysilicon layer over the second insulating layer;
- and
- a drain region formed in the substrate and having a contact region on one side of the first and second polysilicon layers, where a distance from a top surface edge of the second polysilicon layer to the contact region is greater than a distance from a bottom surface edge to the contact region.
4 more elements
Dependencies are inferred from the claim text.