Method of manufacturing metal-oxide-semiconductor transistor
AssigneeUnited Microelectronics Corp.
InventorsYun-Ren Wang, Ying-Wei Yen, Tony Liu
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Abstract
A method of manufacturing a metal-oxide-semiconductor transistor is provided. A substrate having a gate structure thereon is provided. A source/drain extension region is formed in the substrate on each side of the gate structure. Thereafter, a carbon-containing material layer is formed over the substrate and then the carbon-containing material layer is etched back to form spacers on the sidewalls of the gate structure. Finally, a source/drain region is formed in the substrate on each side of the spacer-coated gate structure.
Claims21
A method of manufacturing a metal-oxide-semiconductor (MOS) transistor, comprising:
- providing a substrate having a gate structure thereon;
- forming a source/drain extension region in the substrate on each side of the gate structure;
- forming a carbon-containing silicon nitride layer over the substrate;
- etching back the carbon-containing silicon nitride layer to form a spacer on each sidewall of the gate structure;
- and
- forming a source/drain region in the substrate on each side of the spacer-coated gate structure.
A method of manufacturing a metal-oxide-semiconductor (MOS) transistor, comprising:
- providing a substrate having a gate structure thereon;
- forming a source/drain extension region in the substrate on each side of the gate structure;
- forming a carbon-containing silicon oxide layer over the substrate;
- etching back the carbon-containing silicon oxide layer to form a spacer on each sidewall of the gate structure;
- and
- forming a source/drain region in the substrate on each side of the spacer-coated gate structure.
A method of manufacturing a metal-oxide-semiconductor (MOS) transistor, comprising:
- providing a substrate having a gate structure thereon;
- forming a source/drain extension region in the substrate on each side of the gate structure;
- forming a nitride/oxide carbon-containing composite layer over the substrate;
- etching back the nitride/oxide carbon-containing composite layer to form a spacer on each sidewall of the gate structure;
- and
- forming a source/drain region in the substrate on each side of the spacer-coated gate structure.
Dependencies are inferred from the claim text.