Method of manufacturing capacitor of semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsWoo-Gwan Shim, Jung-Min Oh, Chang-Ki Hong, Sang-Jun Choi, Sang-Yong Kim
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Abstract
Provided is a method of manufacturing a capacitor of a semiconductor device, which can prevent tilting or an electrical short of a lower electrode. In the method, a mesh-type bridge insulating layer is formed above the contact plug on a mold oxide layer. The mold oxide layer and the bridge insulating layer are etched to define an electrode region. The mold oxide layer is removed using an etching gas having an etch selectivity of 500 or greater for the mold oxide layer with respect to the bridge insulating layer.
Claims20
A method of manufacturing a capacitor of a semiconductor device, comprising:
- forming an interlayer insulating layer with a contact plug on a semiconductor substrate;
- forming a mold oxide layer on the contact plug and the interlayer insulating layer;
- forming a mesh-type bridge insulating layer formed in a region above the contact plug on the mold oxide layer;
- etching the mold oxide layer and the bridge insulating layer to define an electrode region;
- and
- removing the mold oxide layer using an etching gas with an etch selectivity of 500 or greater for the mold oxide layer with respect to the bridge insulating layer.
A method of manufacturing a capacitor of a semiconductor device, comprising:
- forming an interlayer insulating layer with a contact plug on a semiconductor substrate;
- forming a mold oxide layer on the contact plug and the interlayer insulating layer;
- forming a bridge insulating layer comprising a mesh-type silicon nitride layer crossing the contact plug on the mold oxide layer;
- etching the mold oxide layer and the bridge insulating layer to define an electrode region;
- removing the mold oxide layer using an etching gas with an etch selectivity of 500 or greater for the mold oxide layer with respect to the bridge insulating layer;
- and
- removing an ammonium silicon fluoride layer formed on the bridge insulating layer.
Dependencies are inferred from the claim text.