Intrinsic decoupling capacitor

A semiconductor structure, comprising:

• a substrate;
• a P-doped epitaxial layer formed over the substrate, the epitaxial layer having filler cell and standard cell regions;
• a plurality of P-doped regions on the filler cell region;
• a plurality of N-doped portions on the filler cell region and alternating with the P-doped regions;
• an N-doped distal linking portion on the filler cell region and connecting a first set of the N-doped portions to one another;
• a P-doped region on the standard cell region adjacent the first set;
• an N-doped proximal linking portion on the standard cell region and connecting a second set of the N-doped portions to one another, the N-doped portions, the N-doped distal linking portion, and the N-doped proximal linking portion jointly forming an N-doped region;
• and
• a conductor connected to the N-doped region to provide a voltage potential to the N-doped region and a capacitance between the N-doped portions and the P-doped regions.

An inverter circuit, comprising:

• a P-well;
• an NMOS transistor formed in and on the P-well;
• an N-well having an inner region and an outer region;
• a PMOS transistor formed in and on the inner region;
• a plurality of P-doped regions in the outer region;
• a ground circuit connected to the P-well and a source/drain region of the NMOS transistor;
• a power circuit connected to the N-well and a source/drain region of the PMOS transistor;
• a Vin circuit connected to a gate of the PMOS transistor and a gate of the NMOS transistor;
• and
• a Vout circuit connected to a source/drain region of the PMOS and a source/drain region of the NMOS transistor.

A bonus cell, comprising:

• a P-well;
• two gate electrodes formed on the P-well;
• three N-diffusion regions formed in the P-well respectively between and outside the gate electrodes on the P-well;
• an N-well adjacent the P-well, the N-well having inner and outer regions;
• a plurality of P-doped regions in the outer region;
• two gate electrodes formed on the N-well;
• and
• three P-diffusion regions formed in the inner regions respectively between and outside the gate electrodes on the N-well.