Three dimensional structure formed by using an adhesive silicon wafer process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFa-Yuan Chang, Hua-Shu Wu, Tsung-Mu Lai, Chau-Yang Wu
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Abstract
A method of making a MEMS device including providing a first substrate with an insulator layer thereon. A holder is attached to the insulator layer, and the first substrate is thinned. Thereafter, cavities are formed in the first substrate and the first substrate is flipped over and bonded to an integrated circuit wafer with the cavities facing the integrated circuit wafer. The holder is removed to provide a first substrate with cavities formed therein facing the integrated circuit wafer and an insulator layer overlying the first substrate.
Claims30
A process of making a semiconductor device comprising:
- providing a first substrate having a first face and a second face, and an insulator layer over the second face of the first substrate;
- attaching a holder to the insulator layer;
- forming a plurality of cavities in the first face of the first substrate;
- bonding the first substrate to a second substrate comprising at least one integrated circuit therein.
A process of making a semiconductor device comprising:
- providing a first substrate comprising a bottom face and a top face, and an insulator layer overlying the top face of the first substrate;
- attaching a holder wafer to the insulator layer;
- thinning the first substrate to provide a post thinning third face;
- forming a plurality of cavities in the first substrate;
- bonding the first substrate to a second substrate, and wherein the plurality of cavities are closest to the second substrate.
A process of making semiconductor device comprising:
- providing a first substrate comprising silicon, the first substrate having a bottom face and a top face;
- providing an insulator layer comprising silicon dioxide overlying the top face of the first substrate;
- applying an adhesive layer over the insulator layer and placing a holder wafer on the adhesive layer and allowing the adhesive layer to cure;
- thinning the first substrate to provide a post thinning third face;
- forming a plurality of cavities in the first substrate leaving portions of the third face of the first substrate;
- bonding the first substrate to a second substrate comprising a semiconductor wafer including a plurality of integrated circuits defined therein and the second substrate including at least one electrode positioned to underlie one of the cavities formed in the first substrate.
A process as set forth in claim 28 wherein the bonding of the first substrate to the second substrate comprises at least one of plasma activation of the surfaces of the first substrate and the second substrate, and ultrasonic bonding.
Dependencies are inferred from the claim text.