Method for monitoring implantation depth of impurity

Abstract

The present invention provides a method for measuring an implantation depth of an impurity injected into a wafer by an ion implantation device, using a measurement device and monitoring whether the measured implantation depth of impurity falls within an allowable range, comprising the steps of using, as a measuring wafer, a wafer having an insulating film and an Si layer formed on the insulating film with a thickness of a 1000 Å unit or less; implanting the impurity in the measuring wafer from above the surface of the Si layer, corresponding to a main surface of the measuring wafer and heat-treating the measuring wafer; and measuring surface resistivity of the main surface of the heat-treated measuring wafer by the measurement device and detecting, as an implantation depth of the impurity from the main surface, a concentration peak depth from the main surface, which corresponds to the surface resistivity and at which a concentration of the impurity implanted in the measuring wafer reaches a peak.

Dependencies are inferred from the claim text.