Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same

A process for forming a resist pattern comprising:

• forming a resist pattern to be thickened;
• and then
• coating a resist pattern thickening material so as to cover the surface of the resist pattern to be thickened,
• wherein the resist pattern thickening material comprises:
• a resin;
• and
• a compound represented by the general formula (1):
• where, “X” is a functional group represented by the following structural formula (1). “Y” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, an alkoxy group, an alkoxycarbonyl group and an alkyl group, and the number of the substitution is an integer of 0 to 3. “m” represents an integer of 1 or more and “n” represents an integer of 0 or more:
• where, “R1” and “R2” may be the same or different, and each represent a hydrogen atom or a substituent group. “Z”represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, and an alkoxy group, and the number of the substitution is an integer of 0 to 3.

A process for manufacturing a semiconductor device comprising the steps of:

• forming a thickened resist pattern by forming a resist pattern to be thickened on a surface of a workpiece, and then by coating a resist is pattern thickening material so as to cover the surface of the resist pattern to be thickened;
• and
• patterning the surface of the workpiece by etching the surface of the workpiece using the thickened resist pattern as a mask,
• wherein the resist pattern thickening material comprises:
• a resin;
• and
• a compound represented by the general formula (1):
• where, “X” is a functional group represented by the following structural formula (1). “Y” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, an alkoxy group, an alkoxycarbonyl group and an alkyl group, and the number of the substitution is an integer of 0 to 3. “m” represents an integer of 1 or more and “n” represents an integer of 0 or more:
• where, “R1” and “R2” may be the same or different, and each represent a hydrogen atom or a substituent group. “Z” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, and an alkoxy group, and the number of the substitution is an integer of 0 to 3.

A semiconductor device manufactured by a process for manufacturing a semiconductor device, wherein the process for manufacturing a semiconductor device comprises the steps of:

• forming a thickened resist pattern by forming a resist pattern to be thickened on a surface of a workpiece, and then by coating a resist pattern thickening material so as to cover the surface of the resist pattern to be thickened;
• and
• patterning the surface of the workpiece by etching the surface of the workpiece using the thickened resist pattern as a mask,
• wherein the resist pattern thickening material comprises:
• a resin;
• and
• a compound represented by the general formula (1):
• where, “X” is a functional group represented by the following structural formula (1). “Y” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, an alkoxy group, an alkoxycarbonyl group and an alkyl group, and the number of the substitution is an integer of 0 to 3. “m” represents an integer of 1 or more and “n” represents an integer of 0 or more:
• where, “R1” and “R2” may be the same or different, and each represent a hydrogen atom or a substituent group. “Z” represents at least any one of a hydroxyl group, an amino group, an amino group substituted by an alkyl group, and an alkoxy group, and the number of the substitution is an integer of 0 to 3.