Compound film with a nonlinear third order susceptibility, and method for fabricating the same
AssigneeNational University Corporation Nagoya University
InventorsShinzo Morita, Shizuyasu Ochiai
Life of this patent
Estimating the term…
Abstract
A carbon hydrogen raw material gas and a SF6 raw material gas are introduced into a chamber with Ar carrier gas, and a high frequency electric power is introduced into the chamber to discharge the raw material gas to be made plasma. At the same time, a metallic plate on a main surface of one of parallel plate electrodes is sputtered to form a compound film made of carbon, sulfide and Au elements which are dispersed in the film matrix made of carbon and sulfide and does not constitute clusters through aggregation.
Claims11
A compound film comprising at least carbon, sulfide and Au elements which are dispersed uniformly and does not constitute clusters through aggregation,
- wherein said compound film exhibits third order susceptibility.
A method for fabricating a compound film, comprising the steps of:
- preparing a pair of parallel plate electrodes in a chamber,
- setting a substrate on a main surface of one of said electrodes which is opposite to the other electrode of said electrodes,
- setting an Au plate on a main surface of the other electrode of said electrodes so as to be opposite to said substrate,
- introducing, in between said electrodes, at least one of a carbon hydrogen raw material gas and a hydrogen raw material gas, a SF6 raw material gas and Ar gas to be discharged and made plasma, and
- applying a given voltage between said electrodes to sputter said metallic plate under said plasma made of said at least one of said carbon hydrogen raw material gas and said hydrogen raw material gas, said SF6 raw material gas and said Ar gas.
Dependencies are inferred from the claim text.