Hydride gas purification for the semiconductor industry
AssigneeEntegris, Inc.
InventorsDaniel Alvarez, Jeffrey Spiegelman, Joshua Cook, Tram Nguyen, Daniel Lev, Troy Scoggins
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Abstract
A method for hydride gas purification uses materials having at least one lanthanide metal or lanthanide metal oxide. The method reduces contaminants to less than 100 parts per billion (ppb), preferably 10 ppb, more preferably 1 ppb. The material can also include transition metals and transition metal oxides, rare earth elements and other metal oxides. The invention also includes materials for use in the method of the invention.
Claims21
A method for removal of contaminants from a stream of hydride gas, comprising contacting a hydride gas stream with a material comprising a quantity of a lanthanide group metal oxide to reduce the level of contaminants of the gas stream to not more than about 100 parts per billion (ppb), the material being substantially unaffected by the gas.
A composition for the purification of hydride gases, comprising 3-20% by weight of a lanthanide group oxide, wherein the composition is essentially free of at least one of copper, iron or nickel.
Dependencies are inferred from the claim text.