Laterally oxidized vertical cavity surface emitting lasers
AssigneeXerox Corporation
InventorRobert Thornton
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Abstract
Highly compact vertical cavity surface emitting laser structures formed by a lateral oxidation process are provided. Specifically, well-controlled oxidized regions bound and define the aperture of a laser structure in a current controlling oxidation layer, wherein the aperture comprises a conductive region in the oxidation layer. These oxidized regions are formed by the use of a pre-defined bounding pattern of cavities etched in the laser structure, which allow the embedded oxidation layer to be oxidized, and which results in a highly reproducible and manufacturable process.
Claims16
A surface emitting laser having a light emitting surface, said laser comprising:
- a substrate;
- a plurality of semiconductor layers formed on said substrate;
- one of said semiconductor layers comprising an active layer having an active region therein;
- a first reflector located on one side of said active layer and a second reflector located on an opposite side of said active layer, at least one of said reflectors allowing a partial transmission of light energy therethrough;
- one of said semiconductor layers being a current controlling layer, said current controlling layer being penetrated by a plurality of hollow cavities;
- an aperture region in said current controlling layer which affects current flowing through said active region, said aperture region being defined by a conductive region in said current controlling layer bordered by oxidized regions in said current controlling layer, and wherein each of said oxidized regions bordering said aperture region surrounds one of said hollow cavities and wherein said aperture region has a shape and a size that are dependent upon shape and arrangement of said hollow cavities;
- and
- first and second electrodes located on said laser device to enable biasing of said active region.
A surface emitting laser having a light emitting surface, said laser comprising:
- a substrate;
- a plurality of semiconductor layers formed on said substrate;
- one of said semiconductor layers comprising an active layer having an active region therein;
- a first reflector located on one side of said active layer and a second reflector located on an opposite side of said active layer, at least one of said reflectors allowing a partial transmission of light energy therethrough;
- one of said semiconductor layers being a current controlling layer, said current controlling layer being penetrated by a plurality of hollow cavities;
- an aperture region in said current controlling layer which affects current flowing through said active region, said aperture region being defined by a conductive region in said current controlling layer bordered by oxidized regions in said current controlling layer;
- and
- first and second electrodes located on said laser device to enable biasing of said active region;
- wherein said aperture region is formed by
- providing said hollow cavities in a predetermined pattern that can produce a said aperture region having a desired size and shape,
- applying oxidizing conditions via said hollow cavities and thereby oxidizing said current controlling layer outwards from said hollow cavities to form said oxidized regions surrounding said hollow cavities, and
- ceasing to apply said oxidizing conditions and thereby (a) terminating said oxidizing and (b) controlling and establishing size and shape of said aperture region.
Dependencies are inferred from the claim text.