Semiconductor devices having plated contacts, and methods of manufacturing the same

A method of forming a contact on semiconductor structure, said method comprising:

• applying a mask layer to a surface of the semiconductor structure, the mask layer having an opening exposing a portion of the surface, substantially planar sidewalls that are substantially perpendicular to the surface and a high aspect ratio;
• plating a conductive material to the exposed portion of the surface;
• and
• removing the mask.

A method of forming a second contact relative to a first contact on a first layer of a semiconductor structure that includes a second layer of semiconductor material, the first contact and first layer having sidewalls, said method comprising:

• forming an insulating layer on at least a portion of the sidewalls of the first layer of semiconductor material;
• applying a mask layer on a surface of the second layer of semiconductor material;
• forming an opening in the mask layer exposing a portion of the surface that is adjacent the insulating layer;
• and
• establishing the second contact by plating a conductive material to the exposed portion of the surface.

A semiconductor device comprising:

• a first layer of semiconductor material having a top surface, sidewalls and a bottom surface;
• a first contact on the top surface, the contact having a width with a submicron dimension, substantially planar sidewalls that are substantially perpendicular to the top surface, and a high aspect ratio;
• a second layer of semiconductor material adjacent the bottom surface of the first layer;
• an insulating material covering at least a portion of the sidewalls of the first layer of semiconductor material;
• and
• a second contact on the surface of the second layer and positioned adjacent the first layer, wherein the surface of the second layer comprises a first material capable of having the second contact plated to it.