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OwnerTaizo Inoue, Kenzo Kitazaki +2inventors
InventorsTaizo Inoue, Kenzo Kitazaki, Hisashi Shigetani, Eiji Mugiya
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A semiconductor device comprises columnar electrodes including columnar portions and ball-shaped low-melting point layers joined to the top surfaces of columnar portions. The amount of plating of the low-melting point layer and the cross-sectional area of the columnar portion are adjusted in such a way that the relationship represented by A≦1.3×B1.5 is satisfied, where the volume of each of the low-melting point layers is represented by A and the area of the top surface of each of the columnar portions is represented by B. Consequently, the low-melting point layer is prevented from trickling on a side surface of the columnar portion during formation of the ball by reflow of the low-melting point layer.
A semiconductor device comprising a plurality of columnar electrodes disposed on a semiconductor substrate, the columnar electrode comprising:
An electronic apparatus equipped with a semiconductor device which comprises a plurality of columnar electrodes disposed on a semiconductor substrate and which is mounted on a wiring substrate with the individual columnar electrodes therebetween, the columnar electrode comprising:
A semiconductor device comprising a plurality of columnar electrodes disposed on a semiconductor substrate, the columnar electrode comprising:
A semiconductor device comprising a plurality of columnar electrodes disposed on a semiconductor substrate, the columnar electrode comprising:
Dependencies are inferred from the claim text.