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US 2006/0186510 A1Published application
Strained-semiconductor-on-insulator bipolar device structures
AssigneeAmberWave Systems Corporation
InventorsAnthony Lochtefeld, Thomas Langdo, Richard Hammond, Matthew Currie, Glyn Braithwaite, Eugene Fitzgerald
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Abstract
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
Claims21
1-34. (canceled)
A structure comprising:
- a strained semiconductor layer disposed over a dielectric layer;
- and
- a bipolar transistor including:
- a collector disposed in a portion of the strained semiconductor layer,
- a base disposed in contact with the collector and over the strained semiconductor layer, and
- an emitter disposed over the base.
3 more elements
39-62. (canceled)
Dependencies are inferred from the claim text.