Metal carbide gate structure and method of fabrication
AssigneeInternational Business Machines Corporation
InventorsCyril Cabral, Christophe Detavernier, Rajarao Jammy, Katherine Saenger
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Abstract
A semiconductor device such as a complementary metal oxide semiconductor (CMOS) comprising at least one FET that comprises a gate electrode comprising a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.
Claims9
A semiconductor structure comprising at least one field effect transistor (FET) having a metal carbide gate electrode obtained by reacting a metal layer and a carbon-containing layer.
A dual work function CMOS device which comprises
- at least one FET having a gate formed from a first gate metal;
- and
- at least one FET having a gate formed from a carbide of said first gate metal.
A dual work function CMOS circuit comprising
- at least one FET having a gate electrode formed from a first metal and at least one additional element, and
- at least one FET having a gate electrode formed from a carbide of said first metal.
Dependencies are inferred from the claim text.