Integrated high voltage capacitor and a method of manufacture therefor
AssigneeTexas Instruments Incorporated
InventorsDavid Larkin, Lily Springer, Makoto Takemura, Ashish Gokhale, Dhaval Saraiya
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Abstract
The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes a second capacitor plate (160) located over the insulator (130).
Claims17
An integrated high voltage capacitor, comprising:
- a first capacitor plate located over or in a semiconductor substrate;
- an insulator located over the first capacitor plate, at least a portion of the insulator comprising an interlevel dielectric layer;
- and
- a second capacitor plate located over the insulator.
A method for manufacturing an integrated high voltage capacitor, comprising:
- forming a first capacitor plate over or in a semiconductor substrate;
- forming an insulator over the first capacitor plate, at least a portion of the insulator comprising an interlevel dielectric layer;
- and
- forming a second capacitor plate over the insulator.
An integrated circuit chip, comprising:
- one or more transistors located over or in a semiconductor substrate, the one or more transistor having one or more interlevel dielectric layers located thereover;
- and
- a high voltage capacitor including a first capacitor plate, an insulator and a second capacitor plate located at least partially in or over the semiconductor substrate, wherein at least one of the one or more interlevel dielectric layers forms at least a portion of the insulator.
Dependencies are inferred from the claim text.