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US 2006/0186444 A1Published application
Spin polarization amplifying transistor
AssigneeIntel Corporation
InventorsDmitri Nikonov, George Bourianoff
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Abstract
An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current to generate spontaneous magnetization of a larger output current.
Claims4
1-23. (canceled)
A method comprising:
- injecting a current into a ferromagnetic semiconductor to increase a carrier density;
- transitioning the ferromagnetic semiconductor to a ferromagnetic state in response to the increase in carrier density;
- and
- injecting a spin polarized current into the ferromagnetic semiconductor transitioned to the ferromagnetic state.
1 more element
Dependencies are inferred from the claim text.