Back to results
US 2006/0186437 A1Published application
Bipolar transistor
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorShigetaka Aoki
Life of this patent
Estimating the term…
Abstract
A bipolar transistor, wherein a outgoing electrode is made of a polycrystalline Si film, and C atom, or Ge atom together with C atom are added in the polycrystalline Si film.
Claims11
A bipolar transistor, wherein
- a outgoing electrode is made of a polycrystalline film, and
- the polycrystalline film contains Si atom as a main component thereof and C atoms is added to the polycrystalline film.
A bipolar transistor, wherein
- a outgoing electrode is made of a polycrystalline film, and
- the polycrystalline film contains Si atom as a main component thereof, and further contains impurity atoms as one of the conductive types and atoms having a stronger bonding force with the Si atom than that of the impurity atoms.
Dependencies are inferred from the claim text.