Back to results
US 2006/0186421 A1Published application
Schottky diode with low leakage current and fabrication method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsDong-sik Shim, Young-hoon Min, Il-jong Song, Ja-nam Ku, Hyung Choi
Life of this patent
Estimating the term…
Abstract
A low leakage Schottky diode and fabrication method thereof. The Schottky diode includes a n-type semiconductor; an anode having a circular periphery formed in a region above the n-type semiconductor; and a cathode formed in a region above the n-type semiconductor and having a pattern surrounding and set apart from the outer periphery of the anode. Because there are no edges at the anode and cathode interface, leakage current is minimized.
Claims10
A Schottky diode comprising:
- a n-type semiconductor;
- an anode having a circular periphery formed in a region above the n-type semiconductor;
- and
- a cathode formed in another region above the n-type semiconductor and having a pattern surrounding and set apart from the outer periphery of the anode.
1 more element
A method of fabricating a Schottky diode, comprising:
- forming an anode having a circular periphery in a region above a n-type semiconductor;
- and
- forming a cathode in another region above the n-type semiconductor and having a pattern surrounding and set apart from the outer periphery of the anode.
Dependencies are inferred from the claim text.