US 2006/0186399 A1 · Semiconductor apparatus and fabrication method of the same

Abstract

It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

Claims21

Dependent claims

A semiconductor apparatus comprising:

a plastic substrate or a plastic base material each of which has thermal conductivity as a support medium;
an adhesive in contact with the plastic substrate or the plastic base material;
an insulating film in contact with the adhesive;
and
a device over the insulating film.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/206,000Filed 18 Aug 2005

Priority

JP 2002-30508418 Oct 2002

Published

24 Aug 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification25 codes

H10D 86/40
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless…
H10D 30/6758
Thin-film transistors [TFT]: characterised by the insulating substrates
H10D 86/0214
Of multiple TFTs: using temporary substrates
H10D 86/411
Characterised by multiple TFTs: characterised by materials, geometry or structure of the substrates

Semiconductor apparatus and fabrication method of the same

Life of this patent

Semiconductor apparatus and fabrication method of the same

Life of this patent

Abstract

Claims21