Oxynitride phosphor and semiconductor light-emitting device
AssigneesSharp Kabushiki Kaisha, National Institute for Materials Science
InventorsKohsei Takahashi, Naoto Hirosaki
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AssigneesSharp Kabushiki Kaisha, National Institute for Materials Science
InventorsKohsei Takahashi, Naoto Hirosaki
Estimating the term…
The invention provides an oxynitride phosphor represented by a composition formula M1-aCeaSibAlcOdNe, wherein M denotes La or a compound of which main component is La and sub-component is at least one kind of element selected from the group consisting of Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu; the a that represents a composition ratio of Ce is a real number satisfying 0.1≦a≦1; the b that represents a composition ratio of Si is a real number satisfying b=(6−z)×f; the c that represents a composition ratio of Al is a real number satisfying c=(1+z)×g; the d that represents a composition ratio of O is a real number satisfying d=z×h; the e that represents a composition ratio of N is a real number satisfying e=(10−z)×i; the z is a real number satisfying 0.1≦z≦3; the f is a real number satisfying 0.7≦f≦1.3; the g is a real number satisfying 0.7≦g≦3; the h is a real number satisfying 0.7≦h≦3; the i is a real number satisfying 0.7≦i≦1.3; and a JEM phase is contained in an amount of 50% or more, and a semiconductor light-emitting device that uses the oxynitride phosphor.
An oxynitride phosphor represented by a composition formula M1-aCeaSibAlcOdNe, wherein
Dependencies are inferred from the claim text.