Chemical vapor deposition system and method of exhausting gas from the system
OwnerJi-Young Choiinventor
Life of this patent
Estimating the term…
Abstract
A chemical vapor deposition system is provided. In the chemical vapor deposition system, an amount of a first reaction gas remaining between a process chamber and a first reaction gas supplying unit is exhausted to a vacuum pump, and an amount of a second reaction gas remaining between the process chamber and a second reaction gas supplying unit is exhausted to an absorption pump. In this system, at least two reaction gases which react with each other in the process chamber are separately exhausted, and thus a reaction byproduct is not generated due to a reaction of the gases remaining in the supply lines. Thus, exhaust lines or pumps can be prevented from being damaged due to the reaction byproduct.
Claims27
A chemical vapor deposition system comprising:
- a process chamber;
- a chuck in the process chamber for mounting a wafer;
- a vacuum pump connected to the process chamber;
- an absorption pump connected to the chuck to hold the wafer on the chuck;
- a first gas supplying line to supply a first reaction gas into the process chamber;
- a second gas supplying line to supply a second reaction gas into the process chamber;
- a first divert line having a first end connected to the first gas supplying line and a second end connected to the vacuum pump to exhaust the first reaction gas to the vacuum pump;
- and
- a second divert line having a first end connected to the second gas supplying line and a second end connected to the absorption pump to exhaust the second reaction gas to the absorption pump.
A chemical vapor deposition system comprising:
- a process chamber;
- a chuck in the process chamber for mounting a wafer;
- a vacuum pump connected to the process chamber;
- an absorption pump connected to the chuck to hold the wafer on the chuck;
- a reduction gas supplying line to supply a reduction gas into the process chamber;
- a metal source gas supplying line to supply a metal source gas into the process chamber;
- a reduction gas divert line having a first end connected to the reduction gas supplying line and a second end connected to the vacuum pump to exhaust the reduction gas to the vacuum pump;
- and
- a metal source gas divert line having a first end connected to the metal source gas supplying line and a second end connected to the absorption pump to exhaust the metal source gas to the absorption pump.
A chemical vapor deposition system comprising:
- a process chamber;
- a chuck in the process chamber for mounting wafer;
- a vacuum pump connected to the process chamber;
- an absorption pump connected to the chuck to hold the wafer on the chuck;
- a metal source gas supplying line to supply a metal source gas into the process chamber;
- a reduction gas supplying line to supply a reduction gas into the process chamber;
- a metal source gas divert line having a first end connected to the metal source gas supplying line and a second end connected to the vacuum pump to exhaust the metal source gas to the vacuum pump;
- and
- a reduction gas divert line having a first end connected to the reduction gas supplying line and a second end connected to the absorption pump to exhaust the reduction gas to the absorption pump.
A method of exhausting gases remaining in a semiconductor fabrication system comprising:
- holding a wafer on a chuck using an absorption pump;
- evacuating an interior of a process chamber using a vacuum pump;
- supplying a first reaction gas into the process chamber through a first gas supplying line;
- supplying a second reaction gas into process the chamber through a second gas supplying line;
- exhausting an amount of the first reaction gas remaining in the first gas supplying line through a first divert line using the vacuum pump;
- and
- exhausting an amount of the second reaction gas remaining in the second gas supplying line through a second divert line using the absorption pump.
A chemical vapor deposition system comprising:
- a first reaction gas supply;
- a second reaction gas supply;
- a first supply line connected to the first reaction gas supply;
- a second supply line connected to the second reaction gas supply;
- a first pump;
- a second pump separate from the first pump;
- a first divert line connected to the first supply line and the first pump;
- and
- a second divert line connected to the second supply line and the second pump.
Dependencies are inferred from the claim text.