High temperature chemical vapor deposition apparatus

A chemical vapor deposition (CVD) system comprising:

• a vacuum reaction chamber, in which at least a substrate which is to be coated is disposed within and wherein the vacuum reaction chamber is maintained at a pressure of less than 100 torr;
• heating means for maintaining the substrate at a temperature of at least 700° C.
• a reactant supply system, having at least an inlet unit connected thereto for providing a plurality of reactant feeds to the reaction chamber;
• an outlet unit in fluid communication with the reaction chamber;
• at least a distribution plate located in between the inlet unit and the substrate, of a sufficient distance away from the substrate, wherein the distribution plate defines a volume space in the reaction chamber for pre-reacting the reactant feeds forming at least a reaction precursor in a gaseous form and a volume space for depositing a coating layer formed from the reacted precursor onto the substrate, and wherein the distribution plates has a plurality of holes or passages for distributing the reacted precursor onto the substrate for the coating layer to have a thickness variation of less than 10%.

A chemical vapor deposition (CVD) system comprising:

• a vacuum reaction chamber, in which at least a substrate which is to be coated is disposed within and wherein the vacuum reaction chamber is maintained at a pressure of less than 100 torr;
• heating means for maintaining the substrate at a temperature of at least 700° C.
• a reactant supply system, having a plurality of jet injectors connected thereto for feeding a plurality of reactants to the chamber;
• an outlet unit in fluid communication with the reaction chamber;
• wherein the jet injectors cause the reactants to pre-react in a volume space in the chamber forming at least a reaction precursor in a gaseous form and
• wherein the pre-reaction space is located between the jet injectors and the substrate, at a sufficient distance away from the substrate for the precursor to react forming a coating layer on the substrate and for the coating layer to have a thickness variation of less than 10%.