Method for producing a semiconductor wafer

A method for producing a semiconductor wafer comprising at least steps of, forming a Si1-XGeX layer (0<X<1) with a critical film-thickness at a deposition temperature of the layer or thinner on a surface of a silicon single crystal wafer and then forming a Si layer with a critical film-thickness at a temperature of later relaxing heat-treatment or thinner thereon, forming an ion-implanted layer for relaxation inside the silicon single crystal wafer by implanting at least one kind of hydrogen ion, rare gas ion, and Si ion through the Si layer, thereafter performing the relaxing heat-treatment, thereby to make the Si1-XGeX layer lattice-relaxed and to form a strained Si layer by introducing lattice strain in the Si layer, thereafter forming an ion-implanted layer for delamination inside the silicon single crystal wafer by implanting at least one kind of hydrogen ion and rare gas ion through the strained Si layer, closely bonding a surface of the strained Si layer of the silicon single crystal wafer as a bond wafer and a surface of a base wafer directly or through an insulator film, thereafter performing delamination at the ion-implanted layer for delamination, exposing the strained Si layer by removing the most surficial Si layer and the Si1-XGeX layer transferred to the side of the base wafer by the delamination, and thereafter depositing Si on a surface of the strained Si layer, and thereby to increase a thickness of the strained Si layer.