Back to results
US 2006/0154488 A1Published application
Semiconductor device and fabrication process thereof
AssigneeFujitsu Limited
InventorHiroshi Morioka
Life of this patent
Estimating the term…
Abstract
A method of fabricating a semiconductor device includes a dry etching process of a silicon surface. The dry etching process is conducted by an etching gas containing at least one gas species selected from the group consisting of: HBr, HCl, Cl2, Br2 and HI, wherein the dry etching process includes a first step conducted at a first temperature; and a second step conducted at a second temperature.
Claims16
A method of fabricating a semiconductor device comprising a dry etching process of a silicon surface,
- said dry etching process being conducted by an etching gas containing at least one gas specie selected from the group consisting of:
- HBr, HCl, Cl2, Br2 and HI,
- said dry etching process comprising:
- a first step conducted at a first temperature;
- and
- a second step conducted at a second temperature.
3 more elements
A dry etching method of a silicon surface, comprising:
- a first step conducted at a first temperature;
- and
- a second step conducted at a second temperature,
- said first and second steps being conducted by an etching gas containing at least one gas specie selected from the group consisting of HBr, HCl, Cl2, Br2 and HI, wherein a deposition gas containing one or both of oxygen and sulfur is added to said etching gas.
1 more element
Dependencies are inferred from the claim text.