US 2006/0154477 A1 · Polymer spacer formation

Abstract

A polymer spacer material may increase the dimensions of the patterned photoresist that is used as a mask to etch the layers below the photoresist, which in turn translates into smaller dimensions etched into the underlying materials. This allows for the formation of integrated circuits having smaller features, smaller overall size, and greater density of features. In particular, the use of a polymer spacer material allows for the formation of contacts within flash memory cells having decreased dimensions so that higher density flash memory cells may be created without causing shorts between contacts or shorts due to misalignment of the contacts. Additionally, the use of the polymer spacer material extends the use of photolithography technologies that are used to form the patterns into the photoresists.

Claims29

Dependent claims

A method, comprising:

patterning a photoresist above a dielectric layer to form a patterned photoresist;
depositing a polymer spacer material on the patterned photoresist;
and
etching an opening into the dielectric layer.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

11/034,788Filed 12 Jan 2005

Published

13 Jul 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10W 20/081
Of dielectric parts thereof: by forming openings in the dielectric parts
H10P 50/283
Of inorganic materials: by chemical means
H10P 50/73
Etching of wafers, substrates or parts of devices: using masks for insulating materials
H10P 76/4085
Characterised by their sizes, orientations, dispositions, behaviours or shapes: characterised by the processes involved to create the masks

Polymer spacer formation

Life of this patent

Polymer spacer formation

Life of this patent

Abstract

Claims29