Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device comprising the steps of:

• preparing a first substrate having a front surface and a back surface, a first device having a first electrode being formed on the front surface;
• preparing a wiring structure formed with a second electrode, the wiring structure having a principal surface;
• bonding the principal surface of the wiring structure to substantially all the back surface of the first substrate through a dielectric film therebetween;
• forming a through-hole extending from the front surface of the first substrate to the second electrode of the wiring structure;
• and
• filling the through-hole with metal to form a connecting electrode connecting the first electrode of the first device and the second electrode of the wiring structure.

A method of manufacturing a semiconductor device comprising the steps of:

• preparing a first substrate having a front surface and a back surface, a first device having a first electrode being formed on the front surface;
• preparing a wiring structure formed with a second electrode, the wiring structure having a principal surface;
• forming a through-hole in the first substrate extending from the front surface to the back surface thereof;
• forming a dielectric film substantially all over the back surface of the first substrate formed with the through-hole;
• bonding the principal surface of the wiring structure to the back surface of the first substrate through the dielectric film therebetween;
• and
• filling the through-hole with metal to form a connecting electrode connecting the first electrode of the first device and the second electrode of the wiring structure.