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AssigneeSharp Kabushiki Kaisha
InventorsYoshihiro Taniguchi, Hiroshi Tsunazawa, Shinya Okazaki, Tetsuya Inui
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A fabrication method of a crystallized semiconductor thin film is such that: by performing pulse irradiation of energy beams in a minute slit shape to a semiconductor thin film (5), the semiconductor thin film (5) of an region to which the energy beams are irradiated is fused and solidified over the whole area in a thickness direction so as to be crystallized, a main beam (6) and a sub beam (7), having smaller energy per unit area than that of the main beam (6), which adjoins the main beam (6), being irradiated to the semiconductor thin film (5).
A method for fabricating a crystallized semiconductor thin film, comprising the step of irradiating a main energy beam and a sub energy beam, whose energy per unit area is smaller than that of the main energy beam and lower than an energy threshold at which a semiconductor thin film fuses, to the semiconductor thin film formed on a substrate, so as to fuse the semiconductor thin film over a whole area in a thickness direction and crystallize the semiconductor thin film, wherein
A fabrication device for fabricating a crystallized semiconductor thin film, comprising energy beam irradiating means for performing pulse irradiation so that a main energy beam and a sub energy beam, whose energy per unit area is smaller than that of the main energy beam and lower than an energy threshold at which a semiconductor thin film fuses, are irradiated to a semiconductor thin film formed on a substrate, wherein
A fabrication device for fabricating a crystallized semiconductor thin film, comprising:
Dependencies are inferred from the claim text.