Method for fabricating gaN-based nitride layer
AssigneesEpivalley Co., Ltd., Samsung Electro-Mechanics Co., Ltd.
InventorsSoo Jeon, Moon Jang
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Abstract
The present invention relates to a method for fabricating a gallium nitride(GaN) based nitride layer including a step of forming a wetting layer having of forming a wetting layer having a composition of In(x1)Ga(y1)N (0<x1≦1, 0≦y1<1, x1+y1=1) on the silicon carbide buffer layer, and a step of forming a nitride layer containing gallium and nitrogen on the wetting layer, thereby can implement an opto-electronic device of high efficiency and high reliability.
Claims18
A method for fabricating a GaN-based nitride layer including:
- a first step of forming a non-single crystalline silicon carbide buffer layer having a thickness of 5 Å to 200 Å on a sapphire substrate;
- a second step of forming a wetting layer having a composition of In(x1)Ga(y1)N (0≦x1≦1, 0≦y1<1, x1+y1=1) on the silicon carbide buffer layer;
- and
- a third step of forming a nitride layer comprising gallium and nitrogen on the wetting layer.
A method for fabricating a GaN-based nitride layer above a substrate including:
- a step of forming a non-single crystalline silicon carbide buffer layer on the substrate prior to growing the GaN-based nitride layer.
A method for fabricating a GaN-based nitride layer including:
- a first step of forming a silicon carbide buffer layer on a substrate;
- a second step of forming a wetting layer having a composition of In(x1)Ga(y1)N (0<x1≦1, 0≦y1≦1, x1+y1=1) on the silicon carbide buffer layer at a first temperature;
- and
- a third step of forming a nitride layer containing gallium and nitrogen on the wetting layer at a temperature higher than the first temperature.
A method for fabricating a GaN-based nitride layer above a substrate including:
- a step of forming a silicon carbide buffer layer on the substrate at a temperature of 600° C. to 990° C. prior to growing the GaN-based nitride layer.
A method for fabricating a GaN-based nitride layer above a substrate including:
- a step of forming a silicon carbide buffer layer of 5 Å to 200 Å in thickness on the substrate prior to growing the GaN-based nitride layer.
Dependencies are inferred from the claim text.