Method of laser processing a wafer

Abstract

A method of laser processing a wafer having a plurality of devices that are composed of a laminate layer laminated on the front surface of a substrate, along a plurality of streets for sectioning the devices, comprising a first groove forming step for applying a first laser beam having absorptivity for the wafer along the streets of the wafer at predetermined intervals to form two grooves for preventing the flaking of a layer, which divide the laminate layer; and a second groove forming step for applying a second laser beam having absorptivity for the wafer to the center between the two grooves for preventing the flaking of a layer, which have been formed along the streets of the wafer by the first groove forming step, along the streets of the wafer to form a dividing groove having a predetermined depth in the laminate layer and the substrate.

Dependencies are inferred from the claim text.