Increasing doping of well compensating dopant region according to increasing gate length

A semiconductor device structure comprising:

• a gate electrode including a spacer surrounding a gate material area and a gate dielectric;
• a super-steep retrograde well positioned under the gate electrode in a substrate;
• and
• a compensating dopant region positioned with the super-steep retrograde well, wherein an amount of dopant in the compensating dopant region is based on a length of the gate material area.

A method of forming a gate electrode including a compensating dopant region, the method comprising the steps of:

• providing a gate electrode including a spacer surrounding a gate material area and a gate dielectric, the gate electrode being positioned over a super-steep retrograde well in a substrate;
• forming a planar dielectric layer about the gate electrode;
• removing the gate material area and the gate dielectric from the gate electrode to form a gate opening;
• performing an angled implant into the gate opening to form the compensating dopant region in the super-steep retrograde well, wherein the formed compensating dopant region provides compensation as a function of a length of the gate opening, such that an amount of dopant implanted increases with the length of the gate opening;
• annealing to activate the compensating dopant region;
• and
• re-forming the gate dielectric and the gate material area in the gate opening.