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US 2006/0154392 A1Published application
Method of making a vertical light emitting diode
AssigneeSemiLEDs Corporation
InventorsChuong Tran, Trung Doan
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Abstract
Methods are disclosed for forming a vertical semiconductor light emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.
Claims44
A method of fabricating a semiconductor vertical light emitting diode (VLED) device, comprising:
- forming multi-layer epitaxial structure of the VLED device that includes an n-gallium nitride (n-GaN) layer, an active layer, and an p-gallium nitride (p-GaN) layer;
- and
- providing a plurality of balls on a surface of the n-GaN layer of the VLED device.
A method comprising:
- forming a vertical light emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer;
- and
- securing a plurality of balls on a surface of the n-doped layer of the VLED device.
A method comprising:
- forming, for a vertical light emitting diode (VLED) device, a MQW active layer between an n-GaN layer and a p-GaN layer;
- securing a plurality of balls to the n-GaN layer;
- and
- forming opposing electrodes in electrical communication, respectively, with the n-GaN layer and the p-GaN layer.
1 more element
Dependencies are inferred from the claim text.