Thin film magnetic memory device reducing a charging time of a data line in a data read operation

A thin film magnetic memory device comprising:

• a plurality of memory cells each having one of first and second electric resistances corresponding to magnetically written storage data;
• a reference cell having an electric resistance intermediate between said first and second electric resistances;
• a first data line being electrically coupled between first and second voltages via the selected memory cell corresponding to a selected address among said plurality of memory cells during data reading;
• a second data line being electrically coupled between said first and second voltages via said reference cell during said data reading;
• a level control circuit provided corresponding to said first and second data lines for changing levels of said first and second data lines to predetermined levels during said data reading;
• and
• a data read circuit for performing a data read operation in accordance with a difference between passing currents of said first and second data lines.