Multi-time programmable semiconductor memory device and multi-time programming method therefor

A method of programming of a semiconductor memory device, comprising:

• receiving an input data signal and an address signal;
• selecting a programmable unit to which the input data signal is written in response to the address signal;
• outputting a data state stored in the selected programmable unit;
• generating an odd-numbered cell programming signal when the data state stored in the selected programmable unit has a first logic state and the input data signal has a second logic state;
• generating an even-numbered cell programming signal when the data state stored in the selected programmable unit has the second logic state and the input data signal has the first logic state;
• programming a first odd-numbered one-time programmable cell that is not programmed among the programmable cells of the selected programmable unit, based on the odd-numbered cell programming signal;
• and
• programming a first even-numbered one-time programmable cell that is not programmed among the programmable cells of the selected programmable unit, based on the even-numbered cell programming signal.

A semiconductor device comprising:

• a unit array including a plurality of programmable units, each programmable unit including a plurality of one-time programmable cells;
• a unit decoder configured to select a programmable unit of the unit array in response to an address signal;
• and
• a cell distribution circuit configured to program one of an odd-numbered one-time programmable cell of the selected programmable unit and an even-numbered one-time programmable cell of the selected programming unit, in response to a previous data state of the selected programmable unit and a present data state to be programmed on the selected programmable unit.