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US 2006/0152616 A1Published application
Image sensor
AssigneeSTMicroelectonics S.r.l.
InventorJerome Vaillant
Life of this patent
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Abstract
An image sensor pixel structure including: a photosensitive area surrounded with a peripheral area placed at the surface of a semiconductor substrate, a stack of several insulating layers alternately exhibiting different refraction coefficients and placed above the peripheral area, a microlens placed at the top of the pixel to have the pixel light converge towards the photosensitive area, and a transparent block placed substantially above the photosensitive area.
Claims9
An image sensor pixel structure comprising:
- a photosensitive area surrounded with a peripheral area placed at the surface of a semiconductor substrate,
- a transparent block placed substantially above the photosensitive area, the transparent block being formed of a filtering material that only passes light beams exhibiting wavelengths belonging to a given range of values,
- a stack of several insulating layers alternately exhibiting different refraction coefficients and placed above said peripheral area, and
- a microlens placed at the top of the pixel to have the pixel light converge towards the photosensitive area.
1 more element
Dependencies are inferred from the claim text.