Package for gallium nitride semiconductor devices

A semiconductor device comprising:

• a semiconductor die having a top surface including a lower semiconductor layer and an upper semiconductor layer disposed over a portion of said lower semiconductor layer, said lower semiconductor layer and said upper semiconductor layer being of the same conductivity type, said lower semiconductor layer being more highly doped than said upper semiconductor layer, said semiconductor die including a plurality of mesas projecting upwardly from said lower contact surface, each of said plurality of mesas including a portion of said upper layer and defining an upper contact surface separated from adjacent ones of said plurality of mesas by a portion of said lower contact surface;
• and a bottom surface opposite to said top surface;
• a die mounting support, wherein the bottom surface of said die is attached to the top surface of said die mounting support;
• a housing enclosing said semiconductor die and die mounting support;
• a plurality of spaced external conductors extending from said housing, at least one of said spaced external conductors having a bond wire post at one end thereof;
• and
• a first bonding wire extending between one of said bond wire posts and a first contact region common to said plurality of mesas.