Semiconductor device and method of manufacturing the same
OwnerMasahiro Kiyotoshi, Atsuko Kawasakiinventors
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Abstract
A semiconductor device includes a semiconductor substrate including an isolation trench provided on a surface thereof, an isolation film provided in the isolation trench, the isolation film including a coating film and a silicon oxide film provided on the coating film, and an oxide film provided between the isolation trench and the isolation film, the oxide film having a thickness such that a portion on a side surface of the isolation trench corresponding to an interface portion between the coating film and the silicon oxide film is thicker than other portion on the side surface.
Claims20
A semiconductor device comprising:
- a semiconductor substrate including an isolation trench provided on a surface thereof;
- an isolation film provided in the isolation trench, the isolation film including a coating film and a silicon oxide film provided on the coating film;
- and
- an oxide film provided between the isolation trench and the isolation film, the oxide film having a thickness such that a portion on a side surface of the isolation trench corresponding to an interface portion between the coating film and the silicon oxide film is thicker than other portion on the side surface.
A semiconductor device comprising:
- a semiconductor substrate including an isolation trench provided on a surface thereof;
- an isolation film provided in the isolation trench, the isolation film including a coating film and a silicon oxide film provided on the coating film;
- and
- a liner film provided between the isolation trench and the isolation film, the liner film having a thickness such that a portion on an upper surface of the isolation trench decreases upward.
The semiconductor device according to claim ˜4, wherein the liner oxide film is an HDP silicon nitride film or a silicon nitride film.
A method of manufacturing a semiconductor device, comprising:
- forming an isolation trench on a surface of a semiconductor substrate;
- filling the isolation trench with a coating film;
- heating the coating film under at least one of condition that shrinkage ratio of the coating film is not higher than a predetermined value and condition that film density of the coating film is not higher than a predetermined value;
- removing an upper portion of the coating film in the isolation trench by etch back using wet etching;
- forming a silicon oxide film on the semiconductor substrate so as to fill the isolation trench;
- and
- planarizing the silicon oxide film by CMP process.
Dependencies are inferred from the claim text.