Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same

An organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, and a drain electrode, the organic thin film transistor comprising:

• a fluorine-based polymer thin film formed between the gate insulating layer and the organic semiconductor layer, wherein
• the fluorine-based polymer thin film is formed of a polymer having a number ratio of carbon atoms to fluorine atoms from about 5:1 to about 30:1 and containing at least one repeating unit selected from the group consisting of repeating units represented by Formula 1 and repeating units represented by Formula 2 below:
• wherein X is a hydrogen atom, a C1˜14 linear or branched alkyl group, a fluorine atom, or a chlorine atom, Y is an oxygen atom or a C2˜14 alkylene group, and R is a group of represented by Formula 3 below:
• £R1¥k£R2¥l £R3) (3)
• wherein R1 is independently any one of the functional groups represented by Formulae 4 below:
• R2 is independently any one of the functional groups represented by Formulae 5 below:
• and
• R3 is independently any one of the functional groups represented by Formulae 6 below:
• (where X contains at least one fluorine atom, and X is independently H, F, CF3, CHF2, CH2F, OCF3, OCHF2 or OCH2F, and m is an integer from 0 to about 18),
• k is an integer between 1 and 3, provided that when k is 2 or greater, each R1 may be the same or different, and
• l is an integer between 0 and 5, provided that when l is 2 or greater, each R2 may be the same or different.