Workpiece processing using ozone gas and chelating agents
OwnerEric Bergmaninventor
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OwnerEric Bergmaninventor
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In systems and methods for cleaning a wafer having an oxide on a surface of the wafer, an aqueous liquid including a chelating agent is applied onto the wafer, while the wafer is also contacted by ozone gas. The ozone readily oxidizes the contaminants in the presence of the aqueous liquid. The chelating agent helps to remove metal contamination from the wafer, without the need for an acid such as hydrofluoric or hydrochloric acid. Etching of the oxide layer is accordingly reduced. The wafer can be effectively cleaned using aqueous liquid and ozone, while largely preserving the oxide layer needed for certain types of micro-scale devices formed on the wafer.
A method for cleaning one or more workpieces comprising:
A method for processing one or more workpieces having an oxide layer, comprising:
A method for cleaning one or more workpieces having an oxide layer on a surface of the workpiece, comprising:
An apparatus for cleaning a workpiece comprising:
Apparatus comprising:
Dependencies are inferred from the claim text.