ß-Ga2o3 single crystal growing method, thin-film single crystal growing method, Ga2o3 light-emitting device, and its manufacturing method

A thin-film single crystal growing method, characterized by:

• preparing a substrate;
• irradiating an excitation beam on a metallic target made of a pure metal or an alloy in a predetermined atmosphere;
• and
• combining chemical species such as atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with atoms contained in the predetermined atmosphere to form a thin film on the substrate.

A thin-film single crystal growing method, characterized by:

• preparing a substrate made of a β-Ga2O3 single crystal;
• irradiating an excitation beam on a metallic target made of Ga or an alloy containing Ga in an atmosphere composed of one, two or more of a gas (gases) selected from oxygen gas, oxygen gas containing ozone, pure ozone gas, N2O gas, NO2 gas, oxygen gas containing oxygen radicals, and oxygen radicals;
• and
• combining chemical species such as atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with the gas (gases) to form a thin-film single crystal made of β-Ga2O3 on the substrate.

A thin-film single crystal growing method, characterized by:

• preparing a substrate made of a β-Ga2O3 single crystal;
• irradiating an excitation beam on a metallic target made of Zn or an alloy containing Zn in an atmosphere composed of one, two or more of a gas (gases) selected from oxygen gas, oxygen gas containing ozone, pure ozone gas, N2O gas, NO2 gas, oxygen gas containing oxygen radicals, and oxygen radicals;
• and
• combining chemical species such as atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with the gas (gases) to form a single crystal made of ZnO on the substrate.

A thin-film single crystal growing method, characterized by:

• preparing a substrate made of a β-Ga2O3 single crystal;
• irradiating an excitation beam on a metallic target made of Ga or an alloy containing Ga in an atmosphere composed of one, two or more of a gas (gases) selected from nitrogen radicals, NH3 gas, NH3 gas containing nitrogen radicals;
• and
• combining chemical species such as atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with the gas (gases) to form a thin-film single crystal made of GaN on the substrate.

A method for manufacturing a light-emitting device characterized by:

• forming a substrate made of a Ga2O3 single crystal and exhibiting n-type conductivity;
• annealing the substrate to form an insulation substrate;
• adding an n-type dopant onto the insulation substrate to form a thin film exhibiting n-type conductivity;
• and
• adding a p-type dopant to the thin film to form a further thin film exhibiting p-type conductivity thereon.