Mask processing device, mask processing method, program and mask

A mask processing method of a mask processing apparatus for generating complementary stencil mask data,

• said mask processing method including:
• a first step of complementarily dividing design data for each predetermined processing unit to generate complementarily divided patterns based on the design data and mask characteristic data indicating at least the characteristics of a complementary stencil mask;
• and
• a second step of generating complementary stencil mask data based on the complementarily divided patterns generated in the first step and the mask characteristic data.

A mask processing method of a mask processing apparatus for generating complementary stencil mask data,

• said mask processing method including:
• a first step of complementarily dividing design data for each predetermined processing unit to generate complementarily divided patterns based on design data and mask characteristic data including at least beam position data of beams and device characteristic data concerning the characteristic of a stencil mask generation device for generating a complementary stencil mask and indicating the characteristics of the complementary stencil mask;
• a second step of generating membrane data for drawing the shape of the membrane in the complementary stencil mask based on the design data and the mask characteristic data;
• a third step of arranging the complementarily divided patterns at predetermined positions of the stencil mask based on the complementarily divided patterns generated for each predetermined processing unit by the first step and the mask characteristic data;
• a fourth step of verifying whether or not defect patterns have been generated on the complementary stencil mask based on the complementarily divided patterns arranged at the third step;
• a fifth step of performing displacement correction processing on the complementarily divided patterns using internal stress of the membrane in the complementary stencil mask;
• a sixth step of performing the displacement correction processing for the complementarily divided patterns using the mechanical characteristics of a mask member of the complementary stencil mask;
• a seventh step of verifying whether or not the complementarily divided patterns coincide with patterns in the design data by a plurality of exposures,
• an eighth step of performing the displacement correction processing on the complementarily divided patterns using front/back inversion of the complementary stencil mask to generate complementary stencil mask data;
• a ninth step of verifying whether or not the complementarily divided patterns coincide with patterns in the design data based on the complementary stencil mask data generated by the eighth step and the design data;
• and
• a 10th step of generating drawing membrane data for making the stencil mask generation device draw the membrane and draw the complementarily divided patterns in the membrane based on the membrane data, the complementary stencil mask data, and the device characteristic data.

A program to be executed by an information processing apparatus,

• said program comprising:
• a first routine of complementarily dividing design data for each predetermined processing unit to generate complementarily divided patterns based on the design data and mask characteristic data indicating at least the characteristics of a complementary stencil mask;
• and
• a second routine of generating complementary stencil mask data based on the complementarily divided patterns generated at the first routine and the mask characteristic data.

A program to be executed by an information processing apparatus,

• said program comprising:
• a first routine of complementarily dividing design data for each predetermined processing unit to generate complementarily divided patterns based on the design data and mask characteristic data including at least beam position data of beams and device characteristic data concerning the characteristics of a stencil mask generation device for generating the complementary stencil mask and indicating the characteristics of the complementary stencil mask;
• a second routine of generating membrane data for drawing the shape of the membrane in the complementary stencil mask based on the design data and the mask characteristic data;
• a third routine of arranging the complementarily divided patterns at predetermined positions of the stencil mask based on the complementarily divided patterns generated for each predetermined processing unit by the first routine and the mask characteristic data;
• a fourth routine of verifying whether or not a defect pattern is generated on the complementary stencil mask based on the complementarily divided patterns arranged in the third routine;
• a fifth routine of performing displacement correction processing on the complementarily divided patterns using internal stress of the membrane in the complementary stencil mask;
• a sixth routine of performing displacement correction processing on the complementarily divided patterns using mechanical characteristics of a mask member of the complementary stencil mask;
• a seventh routine of verifying whether or not the complementarily divided patterns coincide with patterns in the design data by a plurality of exposures;
• an eighth routine of generating the complementary stencil mask data by performing displacement correction processing on the complementarily divided patterns using front/back inversion of the complementary stencil mask;
• a ninth routine of verifying whether or not the complementarily divided patterns coincide with patterns in the design data based on the complementary stencil mask data generated by the eighth routine and the design data;
• and
• a 10th routine of generating drawing membrane data for making the stencil mask generation device draw the membrane and draw the complementarily divided patterns in the membrane based on the membrane data, the complementary stencil mask data, and the device characteristic data.