Method for forming step channel of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorYoung Cho
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Abstract
A method for forming a step channel of a semiconductor device is disclosed. The method for forming a step channel of a semiconductor device comprises forming a hard mask layer pattern defining a step channel region on a semiconductor substrate, forming a spacer on a sidewall of the hard mask layer pattern, and simultaneously etching the spacer and a predetermined thickness of the semiconductor substrate using the hard mask layer pattern and the spacer as an etching mask.
Claims13
A method for forming a step channel of a semiconductor device, comprising the steps of:
- (a) forming a hard mask layer pattern defining a step channel region on a semiconductor substrate;
- (b) forming a spacer on a sidewall of the hard mask layer pattern;
- and
- (c) simultaneously etching the spacer and a predetermined thickness of the semiconductor substrate using the hard mask layer pattern and the spacer as an etching mask.
A method for forming a step channel of a semiconductor device, comprising the steps of:
- (a) forming a stacked structure of an etch barrier oxide film pattern and a hard mask layer pattern on a semiconductor substrate, the stacked structure defining a step channel region;
- (b) forming a spacer on a sidewall of the stacked structure;
- and
- (c) simultaneously etching the spacer, the hard mask layer pattern and a predetermined thickness of the semiconductor substrate using the stacked structure and the spacer as an etching mask.
Dependencies are inferred from the claim text.