Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device to form a STAR (step-gated asymmetry recess) cell, comprising the steps of:

• forming an isolation film on a silicon substrate to define an active region;
• forming an antireflective film on an entire surface of the substrate containing the isolation film;
• forming a photosensitive film pattern on the antireflective film while exposing a portion of the isolation film or the active region adjacent to the isolation film;
• etching the antireflective film, the isolation film, and the substrate by using the photosensitive film pattern as an etching mask to recess the active region;
• performing a light etch treatment on a substrate resultant without removing the remaining photosensitive film pattern, so as to remove a damaged layer and a carbon pollutant formed on a surface of the recessed active region;
• and
• removing the remaining photosensitive film pattern and the antireflective film.