Chemical mechanical polishing method
AssigneeSamsung Electronics Co., Ltd.
InventorsDong-Keun Kim, Chung-Ki Min, Yong-Sun Ko, Kyung-Hyun Kim
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Abstract
In an embodiment, a chemical mechanical polishing method for a substrate having a first layer and a stepped portion. A surface of the first layer is positioned above an upper face of the stepped portion. A polishing process for selectively removing the stepped portion is performed on the first layer by using a first slurry composition that has a self-stopping characteristic so that the first layer is changed into a second layer having a substantially flat surface. A second polishing process is performed using a second slurry composition that does not have the self-stopping characteristic, until the upper face of the stepped portion is exposed.
Claims29
A method of chemical mechanical polishing a substrate of a type comprising:
- a first stepped portion having a first upper face, a first lower face positioned below the first upper face, and a first sidewall between the first upper face and the first lower face;
- and
- a first layer on the substrate, the first layer including a second stepped portion having a second upper face, a second lower face positioned below the second upper face, and a second sidewall between the second upper face and the second lower face, the second stepped portion formed over the first stepped portion, the second stepped portion substantially conforming to the first stepped portion, the first upper face positioned below the second lower face, the method comprising:
- performing a first polishing process on the second stepped portion to change the first layer into a second layer having a substantially flat surface, the second layer covering the first upper face;
- and
- performing a second polishing process on the second layer until the first upper face is exposed.
A method of chemical mechanical polishing a substrate of a type comprising:
- a first stepped portion having an upper face, a middle face positioned below the upper face, a lower face positioned below the middle face, an upper sidewall between the upper face and the middle face and a lower sidewall between the middle face and the lower face;
- and
- a first layer on the substrate having a surface above the upper face of the first stepped portion, the first layer having a second stepped portion substantially conforming to the first stepped portion, the method comprising:
- performing a first polishing process on the second stepped portion to change the first layer into a second layer having a substantially flat surface, the second layer covering the upper face;
- and
- performing a second polishing process on the second layer until the upper face is exposed.
A method of chemical mechanical polishing a substrate of a type comprising:
- a first stepped portion having an upper face;
- and
- a first layer on the substrate, the first layer including a second stepped portion, the second stepped portion formed over, and substantially conforming to, the first stepped portion, the method comprising:
- performing a first polishing process on the second stepped portion to change the first layer into a second layer having a substantially flat surface, the second layer covering the upper face;
- and
- performing a second polishing process on the second layer until the upper face is exposed.
Dependencies are inferred from the claim text.