Method for etching and for forming a contact hole using thereof

A method for etching which includes:

• a process for forming an organic mask having a first opening portion and a second opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,
• a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,
• a process for forming a transformed organic mask by dissolving the organic mask in contact with organic solvent, reflowing and at least filling a bottom of the first etching structure with a part of re-flown organic mask while leaving a upper etching structure unfilled, and
• a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, provided with the upper etching structure and a lower etching structure, by forming the lower etching structure lying just below the upper etching structure while selectively etching the constituent part to be etched to a depth of the second final target level which is deeper than that of the first final target level without any etching damages to the bottom of the first etching structure using the transformed organic mask.

A method for etching which includes:

• a process for forming an organic mask having a first opening portion and a second opening portion having a dimension larger than that of the first opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,
• a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,
• a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of the first etching structure and along a side wall of a upper etching structure of the second etching structure, so that the re-flown organic mask fills both of the side walls and at least a bottom of the first etching structure while leaving a bottom of the upper etching structure unfilled, and
• a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth and with forward tapered in a staircase pattern, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure and having a horizontal dimension smaller than that of the upper etching structure in the second etching structure, while selectively etching the constituent part to be etched to the depth of the second final target level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.

A method for etching which includes:

• a process for forming an organic mask having a first opening portion and a second opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,
• a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,
• a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of the first etching structure, so that the re-flown organic mask fills the side wall of the first etching structure and at least a bottom thereof while leaving inside of the upper etching structure unfilled, and
• a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure in the second etching structure, by selectively etching the constituent part to be etched to the depth of the second final target level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.

A method for etching which includes:

• a process for forming an organic mask having a first opening portion and a second opening portion, and having a thickness in the vicinity of the second opening portion thinner than other portions by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,
• a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,
• a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of the first etching structure, so that the re-flown organic mask fills the side wall of the first etching structure and at least a bottom thereof while leaving inside of the upper etching structure unfilled, and
• a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure in the second etching structure, by selectively etching the constituent part to be etched to the depth of the second final target level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.

A method for etching which includes:

• a process for forming an organic mask having a first opening portion and a second opening portion, and having a thickness in the vicinity of the second opening portion thinner than other portions by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,
• a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,
• a process for removing only a portion with thinner film thickness in the vicinity of the second opening portion,
• a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of only the first etching structure, so that the re-flown organic mask fills the side wall of the first etching structure and at least a bottom thereof while leaving inside of the upper etching structure unfilled, though the re-flown organic mask reaches a vicinity area of the upper end of the upper etching structure, and
• a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure in the second etching structure, by selectively etching the constituent part to be etched to the depth of the second final target level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.

A method for forming a contact hole which includes:

• a process for forming an organic mask having a first opening portion and a second opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,
• a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,
• a process for forming a transformed organic mask by dissolving the organic mask in contact with organic solvent, reflowing and at least filling a bottom of the first etching structure with a part of re-flown organic mask while leaving a upper etching structure unfilled, and
• a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, provided with the upper etching structure and a lower etching structure, by forming the lower etching structure lying just below the upper etching structure white selectively etching the constituent part to be etched to a depth of the second final target level which is deeper than that of the first final target level without any etching damages to the bottom of the first etching structure using the transformed organic mask.

A method for forming a contact hole which includes:

• a process for forming an organic mask having a first opening portion and a second opening portion having a dimension larger than that of the first opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,
• a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,
• a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of the first etching structure and along a side wall of a upper etching structure of the second etching structure, so that the re-flown organic mask fills both of the side walls and at least a bottom of the first etching structure while leaving a bottom of the upper etching structure unfilled, and
• a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth and with forward tapered in a staircase pattern, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure and having a horizontal dimension smaller than that of the upper etching structure in the second etching structure, while selectively etching the constituent part to be etched to the depth of the second final target level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.

A method for forming a contact hole which includes:

• a process for forming an organic mask having a first opening portion and a second opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,
• a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,
• a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of the first etching structure, so that the re-flown organic mask fills the side wall of the first etching structure and at least a bottom thereof while leaving inside of the upper etching structure unfilled, and
• a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure in the second etching structure by selectively etching the constituent part to be etched to the depth of the second final target Level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.

A method for forming a contact hole which includes:

• a process for forming an organic mask having a first opening portion and a second opening portion, and having a thickness in the vicinity of the second opening portion thinner than other portions by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,
• a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,
• a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of the first etching structure, so that the re-flown organic mask fills the side wall of the first etching structure and at least a bottom thereof while leaving inside of the upper etching structure unfilled, and
• a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure in the second etching structure, by selectively etching the constituent part to be etched to the depth of the second final target level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.

A method for forming a contact hole which includes:

• a process for forming an organic mask having a first opening portion and a second opening portion, and having a thickness in the vicinity of the second opening portion thinner than other portions by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,
• a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,
• a process for removing only a portion with thinner film thickness in the vicinity of the second opening portion,
• a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of only the first etching structure, so that the re-flown organic mask fills the side wall of the first etching structure and at least a bottom thereof while leaving inside of the upper etching structure unfilled, though the re-flown organic mask reaches a vicinity area of the upper end of the upper etching structure, and
• a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure in the second etching structure, by selectively etching the constituent part to be etched to the depth of the second final target level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.