Method for forming metal line of semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorJae Lee
Life of this patent
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Abstract
A method for forming a metal line of a semiconductor device forms an aluminum line having an excellent orientation. A specific resistance of a metal line is reduced, thereby enabling sufficient supply of a desired electric current. The method includes steps of forming a lower reflection preventing layer on a silicon wafer, forming a first aluminum layer on the lower reflection preventing layer, forming a second aluminum layer on the first aluminum layer, lowering a surface roughness of the second aluminum layer, forming an upper reflection preventing layer on the second aluminum layer, and forming an aluminum line.
Claims12
A method for forming a metal line of a semiconductor device, comprising:
- forming a lower reflection preventing layer on a silicon wafer;
- forming a first aluminum layer on the lower reflection preventing layer by sputtering using a helium plasma;
- forming a second aluminum layer on the first aluminum layer by sputtering using a plasma of one of krypton, xenon, radon, and any combination thereof;
- lowering a surface roughness of the second aluminum layer;
- forming an upper reflection preventing layer on the second aluminum layer;
- and
- forming an aluminum line by selectively etching the upper reflection preventing layer, second aluminum layer, first aluminum layer, and lower reflection preventing layer.
A method for forming a metal line of a semiconductor device, comprising:
- forming a lower reflection preventing layer on a silicon wafer;
- forming a first aluminum layer on the lower reflection preventing layer;
- forming a second aluminum layer on the first aluminum layer;
- lowering a surface roughness of the second aluminum layer;
- forming an upper reflection preventing layer on the second aluminum layer;
- and
- forming an aluminum line.
Dependencies are inferred from the claim text.