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US 2006/0141780 A1Published application
Methods for the plasma formation of a microelectronic barrier layer
OwnerKenneth Cadieninventor
Life of this patent
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Abstract
The fabrication of an interconnect for a microelectronic device through the use of a nitrogen plasma to form a barrier layer. In one embodiment, an opening is formed in a dielectric layer and a metal layer is formed on the sidewalls and bottom of the opening. The metal layer, such as tantalum, is then exposed to nitrogen atoms thereby forming a metal nitride barrier layer.
Claims18
A method of fabricating a barrier layer, comprising:
- providing a dielectric layer;
- forming a metal layer abutting said dielectric layer;
- and
- exposing said metal layer to nitrogen atoms.
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A method of fabricating an interconnect, comprising:
- flowing nitrogen gas to a plasma generation device;
- striking a nitrogen plasma within said plasma generation device to form nitrogen atoms from a nitrogen-containing gas;
- and
- delivering said nitrogen atoms to a metal layer on a dielectric material, wherein said nitrogen atoms react with said metal layer to form a metal nitride barrier layer.
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A method of fabricating an interconnect, comprising:
- providing a dielectric layer having an opening defined therein by at least one sidewall and a bottom surface;
- forming a metal layer on said at least one sidewall and said bottom surface;
- and
- exposing said metal layer to nitrogen atoms.
1 more element
Dependencies are inferred from the claim text.