Back to results
US 2006/0141779 A1Published application
Method for forming an aluminum contact
AssigneeDongbuAnam Semiconductor Inc.
InventorJae-Suk Lee
Life of this patent
Estimating the term…
Abstract
A method of forming an aluminum contact including forming a barrier metal layer on an interlayer insulation layer pattern defining a contact hole, and forming an aluminum layer on the barrier metal layer so as to fill the contact hole. The method further includes forming a photoresist pattern for ion implantation, implanting ions into the aluminum layer, and annealing by using a rapid thermal process.
Claims4
A method for forming an aluminum contact, comprising:
- forming a barrier metal layer on an interlayer insulation layer pattern defining a contact hole;
- forming an aluminum layer on the barrier metal layer so as to fill the contact hole;
- forming a photoresist pattern for ion implantation;
- implanting ions into the aluminum layer;
- and
- annealing by using a rapid thermal process.
3 more elements
Dependencies are inferred from the claim text.