Pattern transfer mask related to formation of dual damascene structure and method of forming dual damascene structure
AssigneeRenesas Technology Corp.
InventorJunjirou Sakai
Life of this patent
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Abstract
A mask pattern (110) of a pattern transfer mask (101) includes a light shielding pattern (111) and a light transmitting pattern (112). The light shielding pattern (111) has a shape (pattern) subjected to undersizing near portions corresponding to via holes (51H). It is desirable to make undersizing to a greater degree in a region where the via holes (51H) occupy a larger area. While the mask (101) is intended for a negative-type resist, the light shielding pattern (111) and the light transmitting pattern (112) may be changed in position with each other in a mask intended for a positive-type resist.
Claims7
A method of manufacturing a semiconductor device including, in one layer, a plurality of dual damascene structures each including at least one hole, a trench extending over said at least one hole and a conductive material buried in said at least one hole and said trench, comprising the steps of
- (a) forming an interlevel dielectric in which said dual damascene structures are to be formed;
- (b) forming said holes in said interlevel dielectric;
- (c) forming resist on said interlevel dielectric after said step (b);
- (d) patterning said resist after said step (c) by photolithography using a pattern transfer mask having a line pattern subjected to undersizing in the vicinity of a portion that corresponds to each of said holes;
- (e) etching said interlevel dielectric using said resist as patterned as a mask to form said trenches;
- and
- (f) burying said conductive material in said holes and said trenches.
Dependencies are inferred from the claim text.