Semiconductor device with a metal line and method of forming the same
AssigneeDongbuAnam Semiconductor Inc.
InventorSung-Ho Jang
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Abstract
A method of forming a metal line in a semiconductor device including forming an inter-metal dielectric (IMD) layer on the semiconductor substrate including the predetermined pattern, planarizing the IMD layer through a first CMP process, and patterning a via hole on the planarized substrate. The method further includes depositing a barrier metal layer in the via hole, filling a refractory metal in an upper part of the barrier metal layer, planarizing the substrate filled with the refractory metal by performing a second CMP process, forming a refractory metal oxide layer by oxidizing a residual refractory metal region created by the second CMP process, and forming a refractory metal plug by removing the refractory metal oxide layer through a third CMP process.
Claims11
A method of forming a metal line in a semiconductor device, comprising:
- filling a substrate including a predetermined pattern with a refractory metal;
- planarizing the substrate filled with the refractory metal by performing a chemical mechanical planarization (CMP) process;
- forming a refractory metal oxide layer by oxidizing a residual refractory metal region created by the CMP process;
- and
- forming a refractory metal plug by removing the refractory metal oxide layer.
A semiconductor device with a metal line, comprising:
- an inter-metal dielectric (IMD) layer formed on a semiconductor substrate including a predetermined pattern;
- a via hole which is patterned on the substrate after planarizing the IMD layer;
- a barrier metal layer deposited at an inside of the via hole;
- a refractory metal layer formed on the barrier metal layer;
- a refractory metal oxide layer formed by oxidizing a residual refractory metal that is left after planarizing the refractory metal layer;
- and
- a refractory metal plug formed by removing the refractory metal oxide layer.
Dependencies are inferred from the claim text.